JCET Achieves Performance Breakthrough in Glass-Based TGV RF IPDs, Paving the Way for 5G and 6G Applications

April 17, 2026 -- JCET Group announced today the successful process validation of its wafer-level Radio Frequency (RF) Integrated Passive Devices (IPDs). This milestone was achieved using an advanced process integrating Through-Glass Via (TGV) structures with Photosensitive Polyimide (PSPI) Redistribution Layer (RDL) technology. Through rigorous prototyping and empirical evaluation of test structures, JCET has verified the robust manufacturability and distinct performance advantages of constructing 3D IPDs on glass substrates. This breakthrough establishes a highly viable engineering pathway to optimize broader-bandwidth RF front-ends and System-in-Package (SiP) solutions for current 5G and emerging 6G applications.

TGV IPD

By utilizing TGV to construct a 3D interconnect framework, JCET has successfully integrated critical passive components such as inductors and capacitors directly onto glass substrates. A key innovation of this process is the transition from traditional planar inductors to advanced 3D structures, a shift that significantly mitigates high-frequency loss and boosts the device's Quality Factor (Q-factor). In comparative evaluations, the 3D inductors demonstrated a substantial performance leap, increasing the Q-factor by nearly 50% over conventional planar structures of identical inductance under standard test conditions. Furthermore, the overall performance surpasses that of traditional silicon-based IPD technologies, providing a clear roadmap for driving the miniaturization, high-density integration, and enhanced performance of future RF modules.

As the telecommunications industry transitions toward advanced 5G and next-generation 6G networks, RF systems face increasingly stringent demands for bandwidth, linearity, and integration density. Drawing on years of deep-rooted expertise in RF packaging, JCET has established a comprehensive suite of packaging and testing capabilities tailored for RF Power Amplifiers (PA), RF Front-End (RFFE) modules, and millimeter-wave (mmWave) applications. The company’s extensive portfolio supports a diverse array of packaging formats, including SiP and Antenna-in-Package, alongside advanced electromagnetic interference (EMI) shielding solutions such as conformal, compartmentalized, and selective sputter shielding.

JCET also boasts robust testing capabilities covering 5G, mmWave, NB-IoT, and high-speed signals. Beyond physical manufacturing, the company offers collaborative RF system simulation and packaging co-design services. This is backed by a one-stop validation and testing platform encompassing RF microwave, mmWave, 5G cellular, and wireless communications, empowering customers from initial chip design and packaging to the final validation and deployment of fully assembled modules and systems.

"Driven by the rapid iterative leaps in AI computing chips and the need for forward-looking 6G network architectures, JCET is accelerating the engineering and commercialization of glass-based TGV and PSPI wafer-level IPD technologies within RF System-in-Package solutions," said Mr. Wu Boping, JCET Vice President and General Manager of the Technical Service Business Unit. "We are committed to deepening collaborative innovation with industry-leading customers and supply chain partners. Through joint development and rigorous validation, we aim to drive these cutting-edge technologies into high-volume manufacturing, ultimately delivering the higher-performance, ultra-integrated system-level solutions required for the next generation of edge computing and wireless connectivity."