Design-Oriented Modeling of TSV Substrate Noise Coupling to Ring VCOs

By Ilias Exouzidis ^1,2, Alberto Garcia-Ortiz ³, George Floros ^2,4, Georgios Panagopoulos ^1
1 Department of Electrical and Computer Engineering, National Technical University of Athens, Athens, Greece
² Department of Electrical and Computer Engineering, University of Thessaly, Volos, Greece
³ Institute of Electrodynamics and Microelectronics, University of Bremen, Germany
⁴ Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin, Ireland

Abstract

Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF blocks. This paper presents a compact, design-oriented methodology for assessing TSV-induced substrate noise in mixed-signal circuits. We derive a closed-form analytical three-port RLGC macromodel for a Signal-Ground TSV pair that explicitly exposes the substrate node. The methodology is validated using a three-stage Ring VCO designed in a 22 nm FD-SOI technology, where specific RF devices from the process design kit (PDK) provide direct access to the transistor substrate terminals for controlled noise injection. Multi-tone Harmonic Balance simulations in Spectre RF quantify the impact of TSV aggressors on the oscillator's output spectrum. The results indicate that an aggressor of 1 GHz, 0.5 V_pp induces a primary sideband spur of -35.2 dBc. Sensitivity characterization reveals that the magnitude of these sideband spurs increases monotonically with the aggressor amplitude. Furthermore, frequency sweeps demonstrate a low-pass coupling response, where the induced spur magnitude decreases from -20.2 dBc at 500 MHz to -33.1 dBc at 2 GHz.

Index Terms — Through-silicon vias, substrate noise, crosstalk simulation, FDSOI, Ring VCO, Electrical modeling, 3D-IC.